World’s first graphene semiconductor unveiled, 10x faster than silicon!

Fast Tech reported on January 4 that the world’s first functional semiconductor made of graphene has been introduced, with the related paper published in the authoritative journal, Nature.

The paper, titled “Graphene with ultra-high mobility on silicon carbide,” was led by a research team from Tianjin University.

Semiconductors are materials that have electrical conductivity properties that fall between conductors and insulators at room temperature. Materials related to graphite and graphene are widely used in battery electrode materials, semiconductor devices, transistors, and more.

Graphene can be used to make transistors, and due to its highly stable structure, these transistors can still function stably at nearly the atomic scale. In contrast, transistors made of silicon become less stable below 10 nanometers.

According to the paper’s abstract, the Marei research team produced large-area monocrystalline graphene-like material when growing graphene on a silicon carbide wafer covered with organic thin film using a special furnace. This material, grown on the surface of silicon carbide, is virtually identical in structure to exfoliated graphene but lacks good electrical conductivity.

Measurements show that this semiconductor graphene has a mobility rate more than ten times that of silicon at room temperature.

The research team stated that this study has significant implications for the practical use of graphene electronics in the future. But they estimate that it will take another 10 to 15 years before graphene semiconductors can be fully actualized.

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