Samsung to Introduce Cutting-Edge DDR5 DRAM at IEEE International Solid-State Circuits Conference 2024
On February 5th, according to reports by IT Home, Samsung is set to unveil a variety of advanced memory products at the upcoming 2024 IEEE International Solid-State Circuits Conference.
In addition to the previously announced GDDR7 memory (to be featured at the High-Density Memory and Interface Conference), the South Korean tech giant will also introduce a high-speed DDR5 memory chip. This high-capacity 32Gb DDR5 DRAM is developed using 12-nanometer (nm) process technology, offering double the capacity of 16Gb DDR5 DRAM within the same package size.
While Samsung hasn’t revealed much information about the DDR5 chips to be unveiled at the conference, it is known that this DDR5 boasts an I/O speed of up to 8000Mbps per pin. It utilizes Samsung’s fifth-generation 10nm-class wafer foundry node Symmetric-Mosaic architecture, tailored specifically for DRAM products.
IT Home noticed that SangJoon Hwang, Vice President of Memory Products and Technology at Samsung Electronics, first announced the new DDR5 products at the end of 2023. Hwang stated, “With our 12nm-level 32Gb DRAM, we’ve secured a solution that can achieve up to 1TB of DRAM modules, enabling us to ideally meet the increasing demand for high-capacity DRAM in the age of Artificial Intelligence (AI) and Big Data. We will continue to develop DRAM solutions through differentiated process and design technologies, pushing the limits of memory technology.”
Previously, DDR5 128GB DRAM modules manufactured with 16Gb DRAM required Through Silicon Via (TSV) technology. However, the new 32Gb DRAM allows for the production of 128GB modules without using TSV technology, with Samsung stating that this will reduce power consumption by around 10%. This is a welcomed solution for data centers currently grappling with the rising energy demands accompanying the continuous growth of artificial intelligence.
Samsung’s latest DDR5 technology enables the creation of 32GB and 48GB DIMMs at DDR5-8000 speed in single-channel configurations, as well as supports 64GB and 96GB DIMMs in dual-channel configurations.